M/A-COM Technology Solutions - rf-power-transistors-gan

RF Power Transistors - GaN

M/A-COM Technology Solutions offers a new family of Gallium Nitride (GaN) RF power transistors and pallets. This product family targets L- and S-Band pulsed radar applications and leverages M/A-COM Tech's rich heritage of providing both standard and custom solutions to meet the most demanding customer needs. Benefits of M/A-COM Tech’s GaN products include high breakdown voltage, superior power density, and higher and broader frequency operation than Silicon.

Key features of our GaN on Silicon Carbide (SiC) products include:

Offered as transistors or pallets
Utilize 0.5 micron HEMT process
Exhibit excellent RF performance: power, gain, gain flatness, efficiency, and ruggedness
Operate over wide bandwidths

View M/A-COM Tech's GaN Transistors
and Pallets brochure

ACTIVE SPLITTERS	LOW NOISE AMPLIFIERS
AMPLIFIER GAIN BLOCKS	MODULATOR DRIVER AMPLIFIERS
CATV/FTTX AMPLIFIERS	OPTICAL LIMITING AMPLIFIERS
COMPONENT AMPLIFIERS	POWER AMPLIFIERS
DISTRIBUTED AMPLIFIERS	TRANSIMPEDANCE AMPLIFIERS
LIMITING AMPLIFIERS	VARIABLE GAIN AMPLIFIERS

DIGITAL ATTENUATORS	PHASE SHIFTERS
IQ MODULATORS/DEMODULATORS	SWITCHES
LIMITERS	VECTOR MODULATORS
LOGIC DRIVERS	VOLTAGE VARIABLE ATTENUATORS

PIN LIMITER DIODES	VARACTOR MULTIPLIER DIODES
PIN SWITCH AND ATTENUATOR DIODES	VARACTOR TUNING DIODES
SCHOTTKY MIXER AND DETECTOR DIODES

FREQUENCY DOUBLERS	SYNTHESIZERS
FREQUENCY MULTIPLIERS	VOLTAGE CONTROLLED OSCILLATORS

COMPONENT MIXERS	RECEIVERS
DOWN CONVERTERS	TRANSCEIVERS
MIXERS	UP CONVERTERS

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RF Power Transistors - GaN

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